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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1217 DESCRIPTION *With TO-126 package *Complement to type 2SC2877 *Good linearity of hFE APPLICATIONS *Audio frequency power amplifier *Low speed switching *Suitable for output stage of 5 watts car radio and car stereo PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -40 -40 -5 -3 -1 10 150 -55~150 UNIT V V V A A W PD Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-0.5A ; VCE=-2V VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2.5A ; VCE=-2V IC=-0.5A ; VCE=-2V f=1MHz ; VCB=-10V;IE=0 80 25 MIN -40 2SA1217 TYP. MAX UNIT V -0.8 -1.0 -0.1 -0.1 240 V V A A 100 35 MHz pF hFE-1 Classifications O 80-160 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1217 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1217 4 |
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